Photo Microsensor EE-SPW311/411 EE-SPW311

Sales Price:69.99 SGD

Shipped after 2018-04-23

Now we ship to...

Item Feature

Caution: This product is manufactured in Japanese standards. Please check the specification before you order.
Angle of Beam Spread (degree): 5 to 20
Using Periphery illuminanation (Lx): The light-receiving surface illumination incandescent lamp 3000 following
Material (lens): Polycarbonate
Vibration Resistance: 200 to 2000Hz (peak acceleration 100m / s ^{2 ) double amplitude 1.5mm X, Y, Z each direction 2h (4min period)}
Light Source: Peak emission wavelength: GaAs infrared light emitting diode (pulse lighting) (940nm)
Standard Detective Object (mm): Opaque body phi5 more
Power Consumption: Emitter and receiver: 20mA or less each
Output: NPN
Accessories: Form EE-1006L / D Connector with Cable
Ambient Temperature (Degree C): Operation time:-10 to +55
Reserving time:-25 to +65
Supply Voltage: DC5V-5% to 24V +/- 10% ripple (p-p) 5% or less

Indicator Lamp: Lights up when light enters (red) GaP red LED (peak emission wavelength 700nm)
Maximum Ink Ejecting Frequency (Hz): More than 100
Detection Distance (m): 1
Impact Resistance: 500m / s ^{2 X, Y, 3 times each direction Z}
Ambient Humidity (% RH): Operating: 5-85, Storage: 5-95
Material (case): Polybutylene terephthalate (PBT)
Connection Method: (Soldering is not allowed) Connector Type
Detection Method: Transmissive type
Protection Structure: IEC standard IP66
Operating Mode: ON when light is blocked
Control Output: Residual voltage 0.8V or less NPN open collector output load current 100mA or less (at 100mA load current), residual voltage less than 0.4V (10mA load current at the time)