Photo Microsensor EE-SPW311/411 EE-SPW311

Sales Price:69.22 SGD

Shipped after 2017-10-26

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Item Feature

Caution: This product is manufactured in Japanese standards. Please check the specification before you order.
Angle of Beam Spread (degree): 5 to 20
Using Periphery illuminanation (Lx): The light-receiving surface illumination incandescent lamp 3000 following
Material (lens): Polycarbonate
Vibration Resistance: 200 to 2000Hz (peak acceleration 100m / s ^{2 ) double amplitude 1.5mm X, Y, Z each direction 2h (4min period)}
Light Source: Peak emission wavelength: GaAs infrared light emitting diode (pulse lighting) (940nm)
Standard Detective Object (mm): Opaque body phi5 more
Power Consumption: Emitter and receiver: 20mA or less each
Output: NPN
Accessories: Form EE-1006L / D Connector with Cable
Supply Voltage: DC5V-5% to 24V +/- 10% ripple (p-p) 5% or less
Control Output: Residual voltage 0.8V or less NPN open collector output load current 100mA or less (at 100mA load current), residual voltage less than 0.4V (10mA load current at the time)

Indicator Lamp: Lights up when light enters (red) GaP red LED (peak emission wavelength 700nm)
Maximum Ink Ejecting Frequency (Hz): More than 100
Detection Distance (m): 1
Impact Resistance: 500m / s ^{2 X, Y, 3 times each direction Z}
Ambient Humidity (% RH): Operating: 5-85, Storage: 5-95
Material (case): Polybutylene terephthalate (PBT)
Connection Method: (Soldering is not allowed) Connector Type
Detection Method: Transmissive type
Protection Structure: IEC standard IP66
Operating Mode: ON when light is blocked
Ambient Temperature (Degree C): Operation time:-10 to +55
Reserving time:-25 to +65