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  • Photo Microsensor EE-SPW311/411
  • Photo Microsensor EE-SPW311/411
  • Photo Microsensor EE-SPW311/411
  • Photo Microsensor EE-SPW311/411

Photo Microsensor EE-SPW311/411 EE-SPW311

Item.#
08586112
Mfr.#
EE-SPW311
Package Qty.
1PC
Ship pack of
1
69.22 SGD
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Shipped after 2017-08-01
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Item Feature
Caution
This product is manufactured in Japanese standards. Please check the specification before you order.
Angle of Beam Spread (degree)
5 to 20
Using Periphery illuminanation (Lx)
The light-receiving surface illumination incandescent lamp 3000 following
Material (lens)
Polycarbonate
Vibration Resistance
200 to 2000Hz (peak acceleration 100m / s 2 ) double amplitude 1.5mm X, Y, Z each direction 2h (4min period)
Light Source
Peak emission wavelength: GaAs infrared light emitting diode (pulse lighting) (940nm)
Standard Detective Object (mm)
Opaque body phi5 more
Power Consumption
Emitter and receiver: 20mA or less each
Output
NPN
Accessories
Form EE-1006L / D Connector with Cable
Ambient Temperature (Degree C)
Operation time:-10 to +55
Reserving time:-25 to +65
Supply Voltage
DC5V-5% to 24V +/- 10% ripple (p-p) 5% or less
Indicator Lamp
Lights up when light enters (red) GaP red LED (peak emission wavelength 700nm)
Maximum Ink Ejecting Frequency (Hz)
More than 100
Detection Distance (m)
1
Impact Resistance
500m / s 2 X, Y, 3 times each direction Z
Ambient Humidity (% RH)
Operating: 5-85, Storage: 5-95
Material (case)
Polybutylene terephthalate (PBT)
Connection Method
(Soldering is not allowed) Connector Type
Detection Method
Transmissive type
Protection Structure
IEC standard IP66
Operating Mode
ON when light is blocked
Control Output
Residual voltage 0.8V or less NPN open collector output load current 100mA or less (at 100mA load current), residual voltage less than 0.4V (10mA load current at the time)